Navitas Semiconductor ships 5th Generation GaNFast technology in U.S
Navitas Semiconductor has announced the first shipments of its latest 5th Generation GaNFast™ technology manufactured in the United States through a partnership with GlobalFoundries (GF). This marks a significant milestone in strengthening the domestic GaN ecosystem, particularly for AI infrastructure and critical national security applications.
In November 2025, Navitas and GF announced a long-term strategic partnership aimed at accelerating U.S. GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power integrated circuits (ICs) for production at GF’s 200mm GaN-on-Si manufacturing facility in Burlington, Vermont. The first shipment of the Gen 5 GaNFast family began in September 2026, bringing Navitas’ advanced technology into a U.S. production foundry.
Since 2014, Navitas has been at the forefront of GaN power semiconductor innovation, establishing industry leadership in GaNFast FETs and power ICs that integrate power, drive, control, sensing, and protection. With over 300 issued and pending patents, Navitas has built deep proprietary expertise in GaN process design kits (PDKs), device architectures, and integrated power technologies.
The partnership with GF leverages the company’s expertise to optimize its proprietary Gen 5 GaNFast technology and device architectures for manufacturing on GF’s advanced 200mm GaN-on-silicon platform. This collaboration combines GF’s decades of semiconductor manufacturing experience and high-volume production capabilities to deliver a trusted U.S.-based supply of advanced GaN power semiconductors for AI infrastructure and other critical applications.
“Today’s milestone underscores the strength of American innovation and manufacturing,” said Chris Allexandre, President and CEO of Navitas. “Together with GlobalFoundries, we have established a domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the U.S. semiconductor ecosystem.”
“With the first shipment from our U.S. manufacturing line, we are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business. “By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling high-efficiency power solutions for AI infrastructure and other critical applications while enhancing the U.S. semiconductor ecosystem’s resilience.”
The initial product family includes 650V GaN FETs with RDS(ON) values ranging from 11mΩ to 150mΩ. The first wafers are scheduled to ship in September, with internal samples expected in October and strategic customer samples by year-end.
The shipment of Gen 5 GaNFast technology represents a significant step forward in the U.S. semiconductor industry, particularly in the realm of AI infrastructure and critical national security applications. This domestic manufacturing capability is expected to contribute to a more resilient and efficient semiconductor supply chain, bolstering the country’s technological and economic competitiveness.