Navitas Semiconductor to Participate in Citi 2026 Global TMT Conference

TORRANCE, Calif., Sept. 03, 2026 /CourierPR/ -- Navitas Semiconductor, a leading provider of next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will participate in the Citi 2026 Global TMT Conference on September 8, 2026, at the New York Hilton Midtown Hotel. The company's President and CEO, Chris Allexandre, and Chief Financial Officer, Tonya Stevens, will host a fireside chat at 1:15 p.m. Eastern Time and will be available for meetings with investors throughout the day.

During the event, Navitas will present on its latest advancements in power semiconductor technology, including its GaNFast™ power ICs and GeneSiC™ high-voltage SiC devices. These innovations are designed to drive efficiency and performance in various applications, including AI data centers, energy and grid infrastructure, performance computing, and industrial electrification.

Founded in 1993, Navitas Semiconductor is recognized for its expertise in wide-bandgap technologies. The company's GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, facilitating faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices, with their patented trench-assisted planar technology, provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

With over 300 patents issued or pending, Navitas Semiconductor is the world’s first semiconductor company to achieve CarbonNeutral® certification, underscoring its commitment to sustainability. The company's products are used in critical applications where performance and reliability are paramount.