Navitas Awarded Army Program for SiC Power Semiconductors

TORRANCE, Calif., Sept. 28, 2026 /CourierPR/ -- Navitas Semiconductor, the industry leader in next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductors, has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program to develop next-generation 10 kV silicon carbide (SiC) power semiconductor technology. Following a rigorous competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon carbide technology companies in recognition of its unmatched leadership in ultra-high-voltage (≥10 kV) SiC innovation, proven ability to deliver defense-grade performance and reliability, and resilient U.S.-anchored manufacturing ecosystem for advanced power semiconductor technologies.

The ALATTIS prototype project will develop, execute, and validate a novel domestic manufacturing process for ultra-high-voltage (≥10 kV) silicon SiC power semiconductor devices through iterative design, fabrication, and testing. The project is sponsored by the Army Research Laboratory (ARL), which operates under the U.S. Army Combat Capabilities Development Command (DEVCOM). The ALATTIS prototype program seeks to develop, execute, and validate a novel and currently unavailable domestic manufacturing process for 10 kV insulated-gate bipolar transistors (IGBTs). The program is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defense and infrastructure applications. The program will accelerate the development of next-generation 10 kV SiC IGBTs and associated PiN diode technologies for mission-critical systems used by the Armed Forces.

Navitas’ silicon carbide (SiC) power semiconductor portfolio, led by its flagship trench-assisted planar (TAP) MOSFET architecture, spans voltage ratings from 650 V to 6.5 kV and is engineered, manufactured, and supported by a resilient U.S.-anchored supply chain, enabling secure domestic production of advanced power semiconductor technologies for next-generation defense and critical infrastructure applications. Navitas has pioneered multiple industry firsts in ultra-high-voltage (≥10 kV) SiC, including:

- 6.5 kV SiC thyristors in 2010, recognized with a 2010 R&D 100 Award - 10-15 kV PiN diodes in 2012 - 6.5 kV SiC MOSFETs commercial release in 2021

Navitas Semiconductor, the next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, is driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide-bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system efficiency, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented ‘trench-assisted planar technology’ to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.